Basic Electronics Syllabus Computer Science & Engineering “Third Sem.”
Unit – I
Introduction, Transport Phenomena in semiconductor, Formation of P-N Junction, Properties of P-N Junction, P-N
Junction Diodes; Semiconductor Diodes, V-I Characteristics, Effect of Temperature on V-I Characteristics, Ideal Diode,
Diode equation, Diode Resistance, Diode Capacitance: Transition and Diffusion Capacitance.
Unit – II
Rectifying circuits and DC Power Supplies: Load line analysis of diode circuit, Half wave rectifier: Voltage regulation,
Ripple factor, ratio of rectification, Transformer Utilization factor. Full wave rectifier, Bridge rectifier. Filter circuits for
power supply: Inductor filter, Capacitor filter, LC filter, Multiple LC filter, CLC or filter. Zener diode: Break down
mechanism, Characteristics, Specifications, Voltage regulator circuit using zener diode.
Unit – III
Transistor: Introduction, Construction, Types: npn and pnp, Current components. Transistor as an amplifier, Transistor
Characteristics, Transistor Circuit Configuration: Common Base (CB) Configuration, Common Emitter (CE)
Configuration, Common Collector Configuration (CC), Early Effect. Ebers-Moll Model, Maximum Voltage Ratings.
Unit – IV
Transistor Biasing and Thermal stabilization: The operating point, Bias stability, Stability factor, Emitter bias, Collector
– to – base bias, Voltage divider bias with emitter bias, Emitter bypass capacitor. Bias compensation.
Unit – V
Field Effect Transistor (FET): Introduction, Construction, Operation, V-I Characteristics, Transfer Characteristics, Drain
Characteristics, Small-Signal Model.
Metal Oxide Semiconductor Field Effect Transistor (MOSFET): Introduction, Construction, Operation and characteristics, Depletion MOSFET, Enhancement MOSFET.
